Conductivity and thermoelectric power below a mobility edge in amorphous silicon


Journal article


David Waechter
Solid State Communications, vol. 51, 1984, pp. 569-572

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Cite

APA   Click to copy
Waechter, D. (1984). Conductivity and thermoelectric power below a mobility edge in amorphous silicon. Solid State Communications, 51, 569–572.


Chicago/Turabian   Click to copy
Waechter, David. “Conductivity and Thermoelectric Power below a Mobility Edge in Amorphous Silicon.” Solid State Communications 51 (1984): 569–572.


MLA   Click to copy
Waechter, David. “Conductivity and Thermoelectric Power below a Mobility Edge in Amorphous Silicon.” Solid State Communications, vol. 51, 1984, pp. 569–72.


BibTeX   Click to copy

@article{waechter1984a,
  title = {Conductivity and thermoelectric power below a mobility edge in amorphous silicon},
  year = {1984},
  journal = {Solid State Communications},
  pages = {569-572},
  volume = {51},
  author = {Waechter, David}
}


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